2008. 4. 18 1/3 semiconductor technical data ktb2510 epitaxial planar pnp transistor revision no : 2 high power amplifier darlington application. features h complementary to ktd1510 h recommended for 60w audio amplifier output stage. maximum rating (ta=25 ? ) 1. base 2. collector (heat sink) 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f 1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -10 a base current i b -1 a collector power dissipation (tc=25 ? ) p c 100 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-30ma, i b =0 -150 - - v dc current gain h fe v ce =-4v, i c =-7a 5000 12000 20000 collector-emitter saturation voltage v ce(sat) i c =-7a, i b =-7ma - - -2.5 v base-emitter saturation voltage v be(sat) i c =-7a, i b =-7ma - - -3.0 v transition frequency f t v ce =-12v, i c =-2a - 50 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 230 - pf collecto r base emitter 70 ? equivalent circuit
2008. 4. 18 2/3 ktb2510 revision no : 2
2008. 4. 18 3/3 ktb2510 revision no : 2
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